? semiconductor components industries, llc, 2013 october, 2013 ? rev. 3 1 publication order number: bc818 ? 40lt1/d bc818-40l, nsvbc818-40l general purpose transistors npn silicon features ? nsv prefix for automotive and other applications requiring unique site and control change requirements; aec ? q101 qualified and ppap capable ? these devices are pb ? free, halogen free/bfr free and are rohs compliant maximum ratings rating symbol value unit collector ? emitter voltage v ceo 25 v collector ? base voltage v cbo 30 v emitter ? base voltage v ebo 5.0 v collector current ? continuous i c 500 madc thermal characteristics characteristic symbol max unit total device dissipation fr ? 5 board, (note 1) t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance, junction ? to ? ambient r ja 556 c/w total device dissipation alumina substrate, (note 2) t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction ? to ? ambient r ja 417 c/w junction and storage temperature t j , t stg ? 55 to +150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. fr ? 5 = 1.0 x 0.75 x 0.062 in. 2. alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina. http://onsemi.com collector 3 1 base 2 emitter sot ? 23 case 318 style 6 1 2 3 device package shipping ? ordering information ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. 1 6g m bc818 ? 40lt1g sot ? 23 (pb ? free) 3000 / tape & reel 6g = specific device code m = date code* = pb ? free package *date code orientation and/or overbar may vary depending upon manufacturing location. (note: microdot may be in either location) marking diagrams nsvbc818 ? 40lt1g sot ? 23 (pb ? free) 3000 / tape & reel
bc818 ? 40l, nsvbc818 ? 40l http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ? emitter breakdown voltage (i c = ? 10 ma) v (br)ceo 25 ? ? v collector ? emitter breakdown voltage (v eb = 0, i c = ? 10 a) v (br)ces 30 ? ? v emitter ? base breakdown voltage (i e = ? 1.0 a) v (br)ebo 5.0 ? ? v collector cutoff current (v cb = 20 v) (v cb = 20 v, t a = 150 c) i cbo ? ? ? ? 100 5.0 na a on characteristics dc current gain (i c = 100 ma, v ce = 1.0 v) (i c = 500 ma, v ce = 1.0 v) h fe 250 40 ? ? 600 ? ? collector ? emitter saturation voltage (i c = 500 ma, i b = 50 ma) v ce(sat) ? ? 0.7 v base ? emitter on voltage (i c = 500 ma, v ce = 1.0 v) v be(on) ? ? 1.2 v small ? signal characteristics current ? gain ? bandwidth product (i c = 10 ma, v ce = 5.0 vdc, f = 100 mhz) f t 100 ? ? mhz output capacitance (v cb = 10 v, f = 1.0 mhz) c obo ? 10 ? pf i c , collector current (ma) figure 1. dc current gain h fe , dc current gain 1000 10 1000 0.1 10 100 100 1.0 v ce = 1 v t j = 25 c
bc818 ? 40l, nsvbc818 ? 40l http://onsemi.com 3 i b , base current (ma) figure 2. saturation region i c , collector current (ma) figure 3. ?on? voltages 100 10 1 v r , reverse voltage (volts) figure 4. temperature coefficients +1 i c , collector current (ma) figure 5. capacitances 0.1 1 1 10 100 1000 -2 -1 0 v ce , collector-emitter voltage (volts ) v, voltage (volts) v , temperature coefficients (mv/ c) c, capacitance (pf) 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 10 100 1 1.0 0.8 0.6 0.4 0.2 0 1 10 1000 100 10 100 t j = 25 c i c = 10 ma t a = 25 c v be(sat) @ i c /i b = 10 v be(on) @ v ce = 1 v v ce(sat) @ i c /i b = 10 vc for v ce(sat) vb for v be c ob c ib 100 ma 300 ma 500 ma
bc818 ? 40l, nsvbc818 ? 40l http://onsemi.com 4 package dimensions sot ? 23 (to ? 236) case 318 ? 08 issue ap *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* mm inches scale 10:1 0.8 0.031 0.9 0.035 0.95 0.037 0.95 0.037 2.0 0.079 style 6: pin 1. base 2. emitter 3. collector d a1 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. dimensions d and e do not include mold flash, protrusions, or gate burrs. view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.001 b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.10 0.20 0.30 0.004 0.040 0.044 0.002 0.004 0.018 0.020 0.005 0.007 0.114 0.120 0.051 0.055 0.075 0.081 0.008 0.012 nom max l1 h 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.029 c 0 ??? 10 0 ??? 10 on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other inte llectual property. a listing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typical s? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 bc818 ? 40lt1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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